Title :
Quantum distributed model of the resonant tunneling transistor
Author :
Taniyama, H. ; Tomizawa, M. ; Yoshii, A.
Author_Institution :
NTT LSI Labs., Atsugi, Japan
fDate :
3/1/1994 12:00:00 AM
Abstract :
Two-dimensional simulation is crucial in the analysis of the transport characteristics of a resonant tunneling transistor that has a base electrode attached to the well region of a double barrier structure because of the transistor´s two-dimensional heterogeneousness. We propose a novel numerical model of the resonant tunneling transistor that includes two-dimensional potential distribution and two-dimensional spatial current distribution. By using this mode in the present model, it is found that the transistor´s I-V characteristics are strongly dependent on its internal well resistance
Keywords :
current distribution; equivalent circuits; hot electron transistors; resonant tunnelling devices; semiconductor device models; simulation; 2D simulation; I-V characteristics; double barrier structure; internal well resistance; numerical model; quantum distributed model; resonant tunneling transistor; transport characteristics; two-dimensional potential distribution; two-dimensional simulation; two-dimensional spatial current distribution; Analytical models; Current distribution; Electrodes; Numerical models; Numerical simulation; Piecewise linear approximation; Poisson equations; Resonance; Resonant tunneling devices; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
