Title :
Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: a correlation between off-current and transconductance variations
Author :
Fortunato, Guglielmo ; Pecora, Alessandro ; Tallarida, G. ; Mariucci, Luigi ; Reita, C. ; Migliorato, P.
Author_Institution :
IESS-CNR, Roma, Italy
fDate :
3/1/1994 12:00:00 AM
Abstract :
The application of bias-stresses with high source-drain voltage and different gate voltages in polycrystalline thin-film transistors modifies the transconductance as well as the off current. These effects have been explained in terms of hot-holes injection into the gate insulator causing the formation of trap centers in the oxide and interface states near the drain
Keywords :
electric admittance; elemental semiconductors; hole traps; hot carriers; interface electron states; silicon; thin film transistors; MOSFETs; Si; bias-stresses; gate insulator; gate voltages; high source-drain voltage; hot carrier effects; hot-hole injection; interface states; n-channel polycrystalline silicon thin-film transistors; off-current variations; oxide states; transconductance variations; trap centers; Crystallization; Degradation; Hot carrier effects; Hot carriers; Semiconductor thin films; Silicon; Stress; Thin film transistors; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
