Title :
The effect of package parasitics on a series connected GaAs IMPATT diode
Author :
Chen, W.T. ; Kim, C.K.
Author_Institution :
GTE Laboratories, Waltham, Mass.
fDate :
1/1/1974 12:00:00 AM
Abstract :
Computer analysis of a series connected GaAs IMPATT diode is presented. Very good agreement between theoretical appraisal and the experimental observations is obtained. A better thermal dissipation and a smaller parasitic capacitance are the solution to the key problem areas for the series connected device.
Keywords :
Appraisal; Capacitance; Electromagnetic heating; Electronic packaging thermal management; Equivalent circuits; Gallium arsenide; Impedance; Microwave devices; Radio frequency; Schottky diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17872
