The anomalous threshold voltage shift of N- and P-MOSFET under flow and reflow of BPSG film with RTA and/or furnace

Author

Hsieh, J.C. ; Fang, Y.K. ; Chen, C.W. ; Tsai, N.S. ; Lin, M.S. ; Tseng, F.C.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

41

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

458

Lastpage

460

Abstract

Different post oxide annealing technologies, i.e. furnace and/or RTA were done in borophosphosilicate glass (BPSG) films under flow and reflow. It is found that the threshold voltage shift is apparent in P-MOSFET but small in N-MOSFET for a device with RTA reflow. Base on the charge pumping measurement, the donor-type interface states generated by RTA reflow process are supposed to play a major role in this shift. The authors explain the mechanism of RTA induced donor-like interface states in detail

Keywords

annealing; borosilicate glasses; insulated gate field effect transistors; interface electron states; phosphosilicate glasses; rapid thermal processing; semiconductor technology; B2O3-P2O5-SiO2; BPSG; BPSG film; N-MOSFET; P-MOSFET; RTA; anomalous threshold voltage shift; charge pumping measurement; donor-type interface states; furnace annealing; CMOS technology; Charge measurement; Charge pumps; Current measurement; Furnaces; Interface states; MOSFET circuits; Rapid thermal annealing; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.275238

Filename

275238