Title :
Electron injection into SiO2in the N channel stacked gate MOS tetrode
fDate :
2/1/1974 12:00:00 AM
Abstract :
Using a simple model an expression has been derived relating the oxide current to the offset gate voltage in the stacked gate MOS tetrode.
Keywords :
Amorphous materials; Electron mobility; Hall effect; Impact ionization; Phonons; Potential well; Scattering; Tellurium; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17889
