• DocumentCode
    1047441
  • Title

    Dynamic Resistance—A Metric for Variability Characterization of Phase-Change Memory

  • Author

    Rajendran, Bipin ; Breitwisch, Matt ; Lee, Ming-Hsiu ; Burr, Geoffrey W. ; Shih, Yen-Hao ; Cheek, Roger ; Schrott, Alejandro ; Chen, Chieh-Fang ; Joseph, Eric ; Dasaka, Ravi ; Lung, H.-L. ; Lam, Chung

  • Author_Institution
    IBM T.J. Watson Res. Center, Yorktown Heights, NY
  • Volume
    30
  • Issue
    2
  • fYear
    2009
  • Firstpage
    126
  • Lastpage
    129
  • Abstract
    The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, Rd) is found to be inversely proportional to the amplitude of the programming current, as Rd = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.
  • Keywords
    phase change memories; PCM cells; RESET programming; dynamic resistance; phase change memory; programming current; Chalcogenide; electrothermal simulations; nonvolatile memory; phase-change memory (PCM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2008.2010004
  • Filename
    4729596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1047441