• DocumentCode
    104785
  • Title

    Lateral Oxidation of AlAs for Circular and Inverted Mesa Saturable Bragg Reflectors

  • Author

    Nabanja, Sheila P. ; Kolodziejski, Leslie A. ; Petrich, Gale S.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
  • Volume
    49
  • Issue
    9
  • fYear
    2013
  • fDate
    Sept. 2013
  • Firstpage
    731
  • Lastpage
    738
  • Abstract
    A model of the thermal oxidation kinetics that is based on the continuity equation is adapted to the fabrication of circular saturable Bragg reflector (SBR) mesa structures, as well as inverted mesa array structures. A comparison between theoretical calculations and experimental measurements shows good agreement, making the model a useful tool for the controllability of the structure-dependent oxidation process. The model is applied to the wet oxidation of buried AlAs layers for the fabrication of ultra-broadband, high index contrast, III-V/ AlxOy SBRs. The rate of oxidation is found to be dependent not only on the oxidation temperature, but also on oxidation time, mesa geometry, and AlAs layer thickness. The two distinct large-area SBR structures, the circular mesa and the inverted mesa, are fabricated.
  • Keywords
    III-V semiconductors; aluminium compounds; optical arrays; optical elements; optical fabrication; oxidation; AlAs-AlxOy; buried layers; circular mesa saturable Bragg reflector; continuity equation; controllability; inverted mesa array structures; inverted mesa saturable Bragg reflector; large-area SBR structures; lateral oxidation; layer thickness; mesa geometry; oxidation temperature; oxidation time; structure-dependent oxidation process; thermal oxidation kinetics; ultrabroadband high index contrast SBR; wet oxidation; Distributed Bragg reflectors; Fabrication; Furnaces; Gallium arsenide; Geometry; Mathematical model; Oxidation; Semiconductor process modeling; buried oxides; dielectric stacks; lateral oxidation; semiconductor photonic device fabrication;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2013.2268536
  • Filename
    6531673