Title :
Experimental Results of on-State Resistance Reduction by STI Fingers in LDMOSFET
Author :
Su, Ru-Yi ; Chiang, P.Y. ; Gong, Jeng ; Huang, Tsung-Yi ; Tsai, C.L. ; Chou, C.C. ; Liu, C.M.
Author_Institution :
Dept. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu
Abstract :
This letter demonstrates a successful method for on-state resistance reduction up to 20% by shallow trench isolation (STI) fingers and with extra NLDD implant in the fingered region simultaneously for medium power devices. This fingered region provides a multidimensional electric field that avoids MOSFET breakdown voltage decrease, and it also shortens the drain-current conduction path. Therefore, low on-state resistance and high drain driving current is obtained in our proposed device. Careful design for structural parameters of this STI finger is needed to achieve the optimum R ON performance without hurting breakdown voltage.
Keywords :
electric breakdown; isolation technology; power MOSFET; LDMOSFET; STI fingers; breakdown voltage; drain-current conduction path; on-state resistance reduction; power semiconductor devices; shallow trench isolation fingers; Breakdown voltage and electric field shaping; ON-state resistance; shallow trench isolation (STI) finger;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2010565
