• DocumentCode
    1048083
  • Title

    The effect of Cs-O activation temperature on the surface escape probability of NEA (In,Ga)As photocathodes

  • Author

    Fisher, D.G.

  • Author_Institution
    David Sarnoff Research Center, RCA, Princeton, N. J.
  • Volume
    21
  • Issue
    8
  • fYear
    1974
  • fDate
    8/1/1974 12:00:00 AM
  • Firstpage
    541
  • Lastpage
    542
  • Abstract
    It has been found that the temperature TAat which Cs and O are applied to (In,Ga)As negative electron affinity photocathodes has a strong influence on the surface escape probability B. Over the temperature range investigated, 25-100°C, B changes by a factor of approximately 30.
  • Keywords
    Cathodes; Gallium arsenide; Heating; Ocean temperature; Sea measurements; Sea surface; Surface treatment; Temperature distribution; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17963
  • Filename
    1477778
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1048083