Title :
Effect of unequal ionization rates on GaAs IMPATT device admittance
Author :
Laton, Richard W. ; Sudbury, Roger W.
Author_Institution :
Massachusetts Institute of Technology, Lexington, Mass.
fDate :
11/1/1974 12:00:00 AM
Abstract :
The effect of the recently reported unequal ionization rates in GaAs on small signal IMPATT device admittance has been calculated and is compared with equal ionization rate results at room temperature. The ionization rate effect on the static breakdown voltage has also been obtained.
Keywords :
Admittance; Charge carrier processes; Current density; Cutoff frequency; Diodes; Electron mobility; Gallium arsenide; Ionization; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.18000
