• DocumentCode
    104848
  • Title

    Technology/Circuit/System Co-Optimization and Benchmarking for Multilayer Graphene Interconnects at Sub-10-nm Technology Node

  • Author

    Chenyun Pan ; Raghavan, Praveen ; Ceyhan, Ahmet ; Catthoor, Francky ; Tokei, Zsolt ; Naeemi, Azad

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    62
  • Issue
    5
  • fYear
    2015
  • fDate
    May-15
  • Firstpage
    1530
  • Lastpage
    1536
  • Abstract
    Based on realistic circuit- and system-level simulations, graphene interconnects are analyzed in terms of multiple material properties, such as the mean free path (MFP), the contact resistance, and the edge roughness. The benchmarking results indicate that the advantage of using graphene interconnects occurs only under certain circumstances. The device-level parameters, including the supply and threshold voltages, and the circuit-level parameters, including the wire length and width, have large impacts on both the delay and energy-delay product (EDP). At the circuit level, one representative circuit, a 32-bit adder, is investigated, where up to 40% and 70% improvements in delay and EDP are observed. At the system-level analysis, an ARM Cortex-M0 processor is synthesized, and placement and routing are performed. After replacing copper interconnects with multilayer graphene interconnects, up to 15% and 22% performance improvements in clock frequency and EDP have been observed. It is also demonstrated that the benefits of using graphene for the ARM core processor are strongly dependent on the quality of the graphene, such as the MFP and the edge roughness.
  • Keywords
    adders; contact resistance; graphene; integrated circuit interconnections; optimisation; 32-bit adder; ARM Cortex-M0 processor; ARM core processor; EDP; MFP; circuit-level simulations; contact resistance; edge roughness; energy-delay product; mean free path; multilayer graphene interconnects; multiple material properties; supply voltages; system co-optimization; system-level simulations; threshold voltages; Capacitance; Copper; Delays; Graphene; Integrated circuit interconnections; Resistance; Wires; 32-bit adder; ARM core; delay; energy-delay product (EDP); multilayer graphene interconnect; performance; performance.;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2015.2409875
  • Filename
    7061953