Title :
Si UHF MOS high-power FET
Author :
Morita, Y. ; Takahashi, H. ; Matayoshi, H. ; Fukuta, M.
Author_Institution :
Fujitsu Ltd., Kobe, Japan
fDate :
11/1/1974 12:00:00 AM
Abstract :
An n-channel depletion-type Si UHF MOS power FET has been developed which exhibits 16.4-W output power, 6.1-dB power gain, and 35-percent drain efficiency at 700 MHz. The island-like n+source, interdigitated 5-µm-long and 20-mm-wide gate, and n+drain were fabricated in p on p+epitaxial wafer.
Keywords :
Circuit testing; Electrodes; Epitaxial layers; FETs; MOSFET circuits; Physics; Power generation; Power transistors; Semiconductor devices; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.18003
