DocumentCode :
1048544
Title :
Environmental effects on cracking and delamination of dielectric films
Author :
Lane, Michael W. ; Liu, Xia Hu ; Shaw, Thomas M.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
4
Issue :
2
fYear :
2004
fDate :
6/1/2004 12:00:00 AM
Firstpage :
142
Lastpage :
147
Abstract :
The effects of temperature and moisture on the adhesive and cohesive strength of dielectric materials and the interfaces that are composed of those materials commonly found in thin-film interconnect structures are reviewed. Debond growth rate versus debond driving energy curves (V-G curves) were collected over a range of environmental conditions for both dielectrics and dielectric/metal interfaces. Both are found to exhibit characteristics consistent with stress corrosion cracking mechanisms found in the bulk glass literature. The mechanisms identified in both systems are explained in terms of the salient chemical reactions occurring at the debond tip.
Keywords :
crack-edge stress field analysis; delamination; dielectric properties; dielectric thin films; integrated circuit interconnections; interface structure; adhesive strength; bulk glass literature; cohesive strength; debond driving energy curves; debond growth rate; debond tip; dielectric films; dielectric materials; dielectric/metal interfaces; environmental conditions; film cracking; film delamination; low-k debonding; moisture effect; salient chemical reactions; stress corrosion cracking mechanisms; temperature effects; thin-film interconnect structures; Chemicals; Corrosion; Delamination; Dielectric films; Dielectric materials; Dielectric thin films; Glass; Moisture; Stress; Temperature; Low-k debonding; stress corrosion cracking;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2004.829123
Filename :
1318617
Link To Document :
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