High-precision detector-switched monolithic GaAs time-delay network for the optical control of phased arrays

Author

Ng, Wilfred ; Yap, Danny ; Narayanan, A. ; Walston, A.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

Volume

6

Issue

2

fYear

1994

Firstpage

231

Lastpage

234

Abstract

We report the fabrication and characterization of the two-bit monolithic optical time-delay network on GaAs. GaAs rib-waveguides and InGaAs waveguide-coupled MSM detectors serve respectively as delay-lines and optoelectronic switches on the photonic integrated circuit. From the linear RF differential phase observed between 1 and 11 GHz, we estimate that the measured time-delays are within 4 psec of their designed values.<>

Keywords

III-V semiconductors; antenna phased arrays; delay lines; gallium arsenide; indium compounds; infrared detectors; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; microwave antenna arrays; optical switches; photoconducting devices; semiconductor switches; 1 to 11 GHz; GaAs; GaAs rib-waveguides; InGaAs; InGaAs waveguide-coupled MSM detectors; delay-lines; fabrication; high-precision detector-switched monolithic GaAs time-delay network; linear RF differential phase; optical control; optoelectronic switches; phased arrays; photonic integrated circuit; two-bit monolithic optical time-delay network; Detectors; Gallium arsenide; Indium gallium arsenide; Optical device fabrication; Optical fiber networks; Optical switches; Optical waveguides; Photonic integrated circuits; Propagation delay; Switching circuits;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275435

Filename

275435