DocumentCode :
1048958
Title :
VI-5 GaAs surface and interface states
Author :
Spicer, W.E. ; Gregory, P.
Volume :
21
Issue :
11
fYear :
1974
fDate :
11/1/1974 12:00:00 AM
Firstpage :
745
Lastpage :
745
Keywords :
Atomic layer deposition; Capacitance; Electron traps; Gallium arsenide; Interface states; Photoelectricity; Radiative recombination; Spontaneous emission; Surface cleaning; Vacuum technology;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1974.18047
Filename :
1477862
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1048958
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