DocumentCode :
1048977
Title :
Low-threshold continuous-wave surface emitting lasers with etched void confinement
Author :
Hansing, C.C. ; Deng, H. ; Huffaker, D.L. ; Deppe, D.G. ; Streetman, B.G. ; Sarathy, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume :
6
Issue :
3
fYear :
1994
fDate :
3/1/1994 12:00:00 AM
Firstpage :
320
Lastpage :
322
Abstract :
Data are presented demonstrating low threshold continuous wave operation of AlAs/GaAs/InGaAs vertical cavity surface emitting lasers. Continuous wave thresholds of 470 μA have been realized for device diameters of /spl sim/4 μm, and 1.1 mA for a device diameter of 10 μm. A two-step molecular beam epitaxial growth process is used which results in a buried etched void surrounding the active cavity of the laser.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; 1.1 mA; 10 mum; 4 mum; 470 muA; AlAs-GaAs-InGaAs; AlAs/GaAs/InGaAs; CW lasing; MBE growth; active cavity; continuous wave thresholds; continuous-wave; device diameters; etched void confinement; low threshold; low-threshold; surface emitting lasers; two-step molecular beam epitaxial growth process; vertical cavity; Etching; Gallium arsenide; Molecular beam epitaxial growth; Optical buffering; Optical devices; Optical surface waves; Plasma temperature; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.275477
Filename :
275477
Link To Document :
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