Title :
High temperature operation of circular-grating surface-emitting DBR lasers fabricated on an InGaAs/GaAs structure
Author :
Fallahi, M. ; Dion, M. ; Chatenoud, F. ; Templeton, I.M. ; Barber, R.
Author_Institution :
Solid State Optoelectron. Consortium, Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
3/1/1994 12:00:00 AM
Abstract :
We demonstrate high temperature operation of circular-grating surface-emitting distributed Bragg reflector lasers. The structure is a strained InGaAs/GaAs double quantum well. Circular gratings are defined by electron beam lithography. No epitaxial regrowth is used. A surface emission power of over 40 mW under pulsed operation at temperatures of up to 80/spl deg/C is obtained without saturation. A fixed single mode operation was achieved over a temperature range of 60 degrees.<>
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; electron beam lithography; gallium arsenide; indium compounds; semiconductor lasers; 40 mW; 80 C; DBR lasers; InGaAs-GaAs; InGaAs/GaAs structure; circular-grating; distributed Bragg reflector lasers; electron beam lithography; high temperature operation; pulsed operation; single mode operation; strained InGaAs/GaAs double quantum well; surface emission power; surface-emitting; temperature range; Distributed Bragg reflectors; Electron beams; Gallium arsenide; Gratings; Indium gallium arsenide; Laser modes; Lithography; Quantum well lasers; Surface emitting lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
