DocumentCode :
1049018
Title :
Electron irradiation effects in MOS systems
Author :
Churchill, John N. ; Collins, Thomas W. ; Holmstrom, Fred E.
Author_Institution :
University of California, Davis, Calif.
Volume :
21
Issue :
12
fYear :
1974
fDate :
12/1/1974 12:00:00 AM
Firstpage :
768
Lastpage :
777
Abstract :
Flat-band shift measurements were made on p-type MOS devices irradiated with electrons at various gate-bias voltages. A structured reproducible curve of flat-band shift versus gate bias was obtained which could not be readily accounted for with existing models. Experimental data were taken over a wide range of negative and positive gate-bias voltages (consistent with electrical breakdown limits) in order to identify fundamental mechanisms as a basis for formulating a more general model of the entire device. A model is presented based on the known work functions and electron affinities for Al-SiO2-Si devices. It assumes that traps in the Oxide are occupied according to Fermi-Dirac statistics, subject to constraints determined by the interface parameters. A linearized quasi-Fermi level is assumed in the oxide, and the resulting distribution of charged traps is used with Poisson´s equation to obtain a self-consistent energy-band structure throughout the entire device.
Keywords :
Breakdown voltage; Electric breakdown; Electric variables measurement; Electron beams; Ionizing radiation; MOS capacitors; MOS devices; Poisson equations; Statistics; Ultrasonic variables measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1974.18053
Filename :
1477868
Link To Document :
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