Title :
Approximate solution for the redistribution of impurities during second oxidation
Author :
Chakrabarti, Utpal K.
Author_Institution :
Indian Institute of Science, Bangalore, India
fDate :
8/1/1975 12:00:00 AM
Abstract :
The impurity profile for the second oxidation, used in MOST fabrication, has been obtained by Margalit et al. [1]. The disadvantage of this technique is that the accuracy of their solution is directly dependent on the computer time. In this article, an analytical solution is presented using the approximation of linearizing the second oxidation procedure.
Keywords :
Boundary conditions; Differential equations; Fabrication; Green´s function methods; Impurities; Linear approximation; Oxidation; Partial differential equations; Silicon; Trade agreements;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18178