DocumentCode :
1050753
Title :
High-Temperature Continuous-Wave Single-Mode Operation of 1.3- 
m p-Doped InAs–GaAs Quantum-Dot VCSELs
Author :
Xu, D.W. ; Yoon, S.F. ; Tong, C.Z. ; Zhao, L.J. ; Ding, Y. ; Fan, W.J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume :
21
Issue :
17
fYear :
2009
Firstpage :
1211
Lastpage :
1213
Abstract :
In this letter, we have demonstrated continuous-wave single-mode operation of 1.3-mum InAs-GaAs quantum-dot (QD) vertical-cavity surface-emitting lasers (VCSELs) with p-type modulation-doped QD active region from 20degC to 60degC. The highest output power of 0.435 mW and lowest threshold current of 1.2 mA under single-mode operation are achieved. The temperature-dependent output characteristics of QD-VCSELs are investigated. Single-mode operation with a sidemode suppression ratio of 34 dB is observed at room temperature. The critical size of oxide aperture for single-mode operation is discussed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; surface emitting lasers; InAs-GaAs; continuous-wave single-mode operation; quantum-dot VCSELs; sidemode suppression ratio; temperature 20 degC to 60 degC; vertical-cavity surface-emitting lasers; wavelength 1.3 micron; Quantum dot (QD); single-mode; thermal stability; threshold current; vertical-cavity surface-emitting lasers (VCSELs);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2024220
Filename :
5061540
Link To Document :
