DocumentCode :
1051021
Title :
Microwave properties of nonlinear MIS and Schottky-barrier microstrip
Author :
Hughes, Gary W. ; White, Richard M.
Author_Institution :
RCA Laboratories, David Sarnoff Research Center, Princeton, N. J.
Volume :
22
Issue :
10
fYear :
1975
fDate :
10/1/1975 12:00:00 AM
Firstpage :
945
Lastpage :
956
Abstract :
It is shown that metal-insulatior-semiconductor (MIS) and Schottky-barrier microstrip structures having substrate resistivities within a certain range propagate slow waves with phase velocities that are dependent upon the instantaneous voltage at each point along the line. This and other useful properties of these microstrips can be used advantageously in a number of microwave devices. Loss measurements for the MIS microstrip structure confirm the predictred frequency dependence of the attenuation constant. While the levels of measured attenuation presently achieved are fairly high (4.5 dB/cm at 1 GHz), several methods for reducing the attenuation are proposed. A number of devices are discussed, including an electronically variable phase shifter for which attenuation and phase-shift measurements are presented.
Keywords :
Attenuation measurement; Conductivity; Frequency dependence; Frequency measurement; Loss measurement; Microstrip; Microwave devices; Microwave propagation; Phase shifters; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1975.18246
Filename :
1478081
Link To Document :
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