Efficiency and optimum DC bias field for second harmonic generation due to hot-electrons in nonpolar semiconductors

The efficiency of the yield of second harmonics in nonpolar nondegenerate semiconductors is estimated using an improved hyperbolic relation to describe the nonlinear velocity-electric-field relation from the ohmic region up to the saturation region at room temperature. For n-Ge and n-Si, an efficiency of about 4 percent is obtained for the optimum dc bias field, about V0/µ0(i.e. the ratio of the saturation velocity to the low-field mobility).