Title :
Diamond-microchip GaInNAs vertical external-cavity surface-emitting laser operating CW at 1315 nm
Author :
Smith, S.A. ; Hopkins, J.-M. ; Hastie, J.E. ; Burns, D. ; Calvez, S. ; Dawson, M.D. ; Jouhti, T. ; Kontinnen, J. ; Pessa, M.
Author_Institution :
Inst. of Photonics, Univ. of Strathclyde, Glasgow, UK
fDate :
7/22/2004 12:00:00 AM
Abstract :
What is believed to be the first microchip-format vertical external-cavity surface-emitting laser (VECSEL) operating at 1.3 μm is reported. Fundamental-mode continuous-wave output powers >120 mW were achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated single-crystal diamond heatspreader.
Keywords :
III-V semiconductors; diamond; elemental semiconductors; gallium arsenide; gallium compounds; indium compounds; laser mirrors; microchip lasers; surface emitting lasers; wide band gap semiconductors; 1.3 micron; 1315 nm; GaInNAs vertical external-cavity surface-emitting laser; GaInNAs-C; capillary-bonding; continuous-wave output; diamond-microchip VCSEL; dielectric-mirror-coated heatspreader; diode-pumped GaInNAs VECSEL structure; single-crystal diamond heatspreader;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20045378
