Amplification of Nonlinearity in Multiple Gate Transistor Millimeter Wave Mixer for Improvement of Linearity and Noise Figure

Author

Chieh-Lin Wu ; Chikuang Yu ; Kenneth, K.O.

Author_Institution

Silicon Microwave Integrated Circuits & Syst. Res. Group, Univ. of Texas at Dallas, Richardson, TX, USA

Volume

25

Issue

5

fYear

2015

fDate

May-15

Firstpage

310

Lastpage

312

Abstract

Current amplification of nonlinearity in a multiple gate transistor cell is proposed to simultaneously improve the linearity and noise performance of amplifier and mixer, and demonstrated in a mixer fabricated with 45 nm SOI CMOS. The mixer achieves output third order intercept point (OIP3) of 21.4 dBm, power gain of 3.4 dB, and single side band noise figure (NF) of 9.5 dB at radio frequency of 31 GHz. The OIP3 is ~ 5 dB higher and NF is ~ 4 dB lower than the best for CMOS millimeter wave mixers.

Keywords

CMOS analogue integrated circuits; millimetre wave amplifiers; millimetre wave mixers; millimetre wave transistors; silicon-on-insulator; CMOS millimeter wave mixers; OIP3; SOI CMOS; Si; amplifier; frequency 31 GHz; gain 3.4 dB; multiple gate transistor cell; multiple gate transistor millimeter wave mixer; noise figure 9.5 dB; output third order intercept point; single side band noise figure; size 45 nm; CMOS integrated circuits; Gain; Logic gates; Mixers; Noise; Radio frequency; Transistors; CMOS; Gilbert cell; MGTR; SOI; down-conversion mixer; millimeter wave;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2015.2409784

Filename

7061999