Title :
Characteristics of Gate-All-Around Twin Poly-Si Nanowire Thin-Film Transistors
Author :
Sheu, Jeng-Tzong ; Huang, Po-Chun ; Sheu, Tzu-Shiun ; Chen, Chen-Chia ; Chen, Lu-An
Author_Institution :
Inst. of Nanotechnol., Nat. Chiao Tung Univ., Hsinchu
Abstract :
We have investigated the characteristics of gate-all-around (GAA) twin polycrystalline-silicon nanowire (NW) thin-film transistors (TFTs). The NW channel and surrounding gate imparted the GAA twin NW TFT with superior channel controllability. Moreover, the combination of the high surface-to-volume ratio of the NW and the split channel structure led to highly efficient NH3 plasma treatment, which reduced the effective grain-boundary trap-state density. The GAA twin NW TFT exhibited greatly improved electrical performance, including a lower threshold voltage, a steeper subthreshold swing (114 mV/dec), a higher on/off current ratio (> 108), and a virtual absence of drain-induced barrier lowering (13 mV/V).
Keywords :
elemental semiconductors; nanoelectronics; nanowires; plasma applications; silicon; thin film transistors; twin boundaries; Si; electrical performance; gate-all-around twin poly-silicon transistor; grain-boundary trap-state density; highly efficient ammonia plasma treatment; nanowire thin-film transistor; polycrystalline-silicon nanowire TFT; short-channel effects; split channel structure; surface-to-volume ratio; Gate-all-around (GAA); nanowire (NW); plasma treatment; short-channel effects (SCEs); thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2009956