Author :
Endo, Kazuhiko ; Noda, Shuichi ; Masahara, Meishoku ; Kubota, Tomohiro ; Ozaki, Takuya ; Samukawa, Seiji ; Liu, Yongxun ; Ishii, Kenichi ; Ishikawa, Yuki ; Sugimata, Etsuro ; Matsukawa, Takashi ; Takashima, Hidenori ; Yamauchi, Hiromi ; Suzuki, Eiichi
Abstract :
A high aspect ratio and damage-free vertical ultrathin channel for a vertical-type double-gate MOSFET was fabricated by using low-energy neutral-beam etching (NBE). NBE can completely eliminate the charge build-up and photon-radiation damages caused by the plasma. The fabricated FinFETs realize a higher device performance (i.e., higher electron mobility) than that obtained by using a conventional reactive-ion etching. The improved mobility is well explained by the NB-etched atomically flat surface. These results strongly support the effectiveness of the NB technology for nanoscale CMOS fabrication
Keywords :
MOSFET; electron mobility; laser beam etching; FinFET fabrication; atomically flat surface; carrier mobility; charge build-up elimination; damage-free neutral-beam etching; nanoscale CMOS fabrication; photon-radiation damage elimination; vertical-type double-gate MOSFET; CMOS technology; Electron mobility; Etching; Fabrication; FinFETs; MOSFET circuits; Niobium; Plasma applications; Plasma devices; Silicon; Carrier mobility; damaged-free; double-gate MOSFET (DG-MOSFET); neutral beam (NB); utrathin-channel fabrication;
