Simulation of temperature and bias dependencies of β and V TO of GaAs MESFET devices

A DC and temperature-nonlinear GaAs MESFET device model is presented. It offers improved accuracy over existing models by simulating the bias dependency of the device transconductance (β) and pinch-off point (V_TO) parameters. The effect of these bias dependencies becomes more important as the temperature departs from room temperature. Expressions for simulating the temperature dependency of V_TO and β are presented and provide improved accuracy over existing techniques. The model effectively couples the bias and temperature dependency of the devices