DocumentCode :
1052586
Title :
Raman lasers in silicon photonic wires: unidirectional ring lasing versus Fabry-Perot lasing
Author :
Krause, Markus ; Renner, Herwig ; Brinkmeyer, Ernst
Author_Institution :
Tech. Univ. Hamburg-Harburg, Hamburg
Volume :
45
Issue :
1
fYear :
2009
Firstpage :
42
Lastpage :
43
Abstract :
Integrated-optical silicon Raman lasers based on a ring cavity can potentially operate unidirectionally owing to the strong non-reciprocity of the Raman gain in submicron photonic wires. This makes the ring-cavity structure significantly more efficient than the alternative Fabry-Perot structure, in which the less efficient of the two propagation directions is unavoidably involved.
Keywords :
Fabry-Perot resonators; Raman lasers; elemental semiconductors; integrated optics; laser beams; laser cavity resonators; ring lasers; semiconductor lasers; silicon; Fabry-Perot lasing; Raman gain; Si; integrated-optical Raman laser; propagation direction; silicon photonic wires; unidirectional ring lasing;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20093136
Filename :
4733097
Link To Document :
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