Title :
New method for the extraction of the coupling ratios in FLOTOX EEPROM cells
Author :
Moison, B. ; Papadas, C. ; Ghibaudo, G. ; Mortini, P. ; Pananakakis, G.
Author_Institution :
SGS-Thomson Microelectron. Central R&D, Grenoble, France
fDate :
10/1/1993 12:00:00 AM
Abstract :
A method for the extraction of the control gate and drain coupling ratios directly from FLOTOX EEPROM cells is proposed. The method is based on the dependence of the high state threshold voltage on the hold time of the write pulses. The principal advantages of the technique are its accuracy, simplicity, and rapidity, the fact that the so-called dummy cell is not required, and the fact that the coupling ratios obtained correspond to effective values which characterize the actual memory cell operation
Keywords :
EPROM; integrated memory circuits; FLOTOX EEPROM cells; control gate; coupling ratio extraction; drain; high state threshold voltage; memory cell operation; write pulse hold time; EPROM; Electrical capacitance tomography; Electrodes; Fabrication; Microelectronics; Nonvolatile memory; PROM; Parameter extraction; Research and development; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
