Deep-submicrometer CMOS/SIMOX delay modeling by time-dependent capacitance model

A new and generic time-dependent capacitance (NEW-TC) model for propagation delay (speed) in deep-submicrometer-gate CMOS/SIMOX is analytically studied. Theoretical predictions by the NEW-TC model are compared with measurements of the propagation delay in 51-stage ring oscillators. It is found that less than 5% errors are observed between the measured and NEW-TC model performance of a 0.1-μm ring oscillator test circuit. It is also found that an R_d-based model with a proper empirical factor is as good as the NEW-TC model when output capacitance is fixed. It is concluded that the NEW-TC model is better than the conventional models