Title :
Accurate large-signal single current source thermal model for GaAs MESFET/HEMT
Author :
Chaibi, M. ; Fernández, T. ; Rodriguez-Tellez, J. ; Cano, J.L. ; Aghoutane, M.
Author_Institution :
Univ. of Cantabria, Santander
Abstract :
An accurate approach to the simulation of the DC and pulsed IV characteristics of GaAs MESFETs over the -70 to -+70degC temperature range is presented. The new approach, suitably modified can be applied to existing DC models to increase their accuracy and range of operation.
Keywords :
Schottky gate field effect transistors; constant current sources; gallium arsenide; high electron mobility transistors; GaAs; HEMT; MESFET; single current source thermal model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071111
