Title :
Long-wavelength InAlGaAs VCSELs with Al2O3 embedded current-confinement apertures
Author :
Song, H.-W. ; Han, W.S. ; Kim, J. ; Kim, J.-H. ; KoPark, S.-H.
Author_Institution :
IT Convergence & Components Lab., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
fDate :
7/6/2006 12:00:00 AM
Abstract :
Long-wavelength InAlGaAs VCSELs with Al2O3 embedded current-confinement structures are reported. Using atomic layer deposition, the current confinement structures are fabricated by depositing Al2O3 on airgap surfaces of undercut apertures, which are formed by laterally etching the active region. 1.57 μm VCSELs showing an output power of over 1 mW and direct modulation characteristics at 4 Gbit/s are reported using these current-confinement apertures.
Keywords :
III-V semiconductors; aluminium compounds; atomic layer deposition; gallium arsenide; indium compounds; quantum well lasers; surface emitting lasers; 1 mW; 1.57 micron; 4 Gbit/s; Al2O3; InAlGaAs; airgap surfaces; atomic layer deposition; current-confinement apertures; embedded current-confinement structures; undercut apertures; vertical-cavity surface-emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20061534
