Title :
A polysilicon source and drain MOS transistor (PSD MOST)
Author :
Middelhoek, J. ; Kooy, A.
Author_Institution :
Twente University of Technology, Enschede, The Netherlands
fDate :
5/1/1976 12:00:00 AM
Abstract :
An MOS transistor is described in which the source and drain areas are obtained by diffusion from doped polycrystalline silicon. Polysilicon tracks form the interconnect with the diffusion areas without the need for contact windows. As a result transistor and junction sizes are reduced by a factor 2 or 3 over a normal structure. Polycrystalline silicon tracks in this new technique are of greater advantage as interconnect layers than in the silicon gate tecgnique.
Keywords :
Aluminum; Capacitance; Contacts; Etching; Fabrication; Glass; Insulation; MOSFETs; Silicon; Windows;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18442