DocumentCode :
1053036
Title :
A polysilicon source and drain MOS transistor (PSD MOST)
Author :
Middelhoek, J. ; Kooy, A.
Author_Institution :
Twente University of Technology, Enschede, The Netherlands
Volume :
23
Issue :
5
fYear :
1976
fDate :
5/1/1976 12:00:00 AM
Firstpage :
523
Lastpage :
525
Abstract :
An MOS transistor is described in which the source and drain areas are obtained by diffusion from doped polycrystalline silicon. Polysilicon tracks form the interconnect with the diffusion areas without the need for contact windows. As a result transistor and junction sizes are reduced by a factor 2 or 3 over a normal structure. Polycrystalline silicon tracks in this new technique are of greater advantage as interconnect layers than in the silicon gate tecgnique.
Keywords :
Aluminum; Capacitance; Contacts; Etching; Fabrication; Glass; Insulation; MOSFETs; Silicon; Windows;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1976.18442
Filename :
1478456
Link To Document :
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