Title :
Design fabrication of low noise Gunn diode with consideration of a thermocompression bonding effect
Author_Institution :
Mitsubishi Electric Corporation, Itami, Hyogo, Japan
fDate :
6/1/1976 12:00:00 AM
Abstract :
In order to reduce 1/f noise generated by Gunn diodes, an experimental study was made on the effects of thermocompression bonding on Gunn oscillator noise. It is found that carrier traps at dislocations introduced into the Gunn diode by the thermocompression process increase the Gunn oscillator noise significantly. An optimum thermocompression bonding condition for minimizing Gunn diode 1/f noise is described, taking into account such parameters as doping density and device area.
Keywords :
Bonding; Circuit noise; Electrons; Fabrication; Gunn devices; Microwave oscillators; Noise generators; Noise reduction; Semiconductor device noise; Semiconductor diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1976.18453
