Barrier height enhancement in p-silicon MIS solar cells

Calculations are presented which indicate that the barrier height of metal-thin insulator-p-silicon diodes can be greatly enhanced by the presence of positive charge in the interfacial layer. Application of the model to recent MIS silicon solar cell data suggests that oxide charge densities of 3-4 × 10¹²charges.cm^-2could be responsible for the high performance of the reported cells.