Measurement of spontaneous emission factor for vertical-cavity surface-emitting semiconductor lasers

Author

Zhao, Y.-G. ; McInerney, J.G. ; Morgan, R.A.

Author_Institution

Dept. of Phys., Univ. Coll. Cork, Ireland

Volume

7

Issue

11

fYear

1995

Firstpage

1231

Lastpage

1233

Abstract

Using a method based on measurement of modulation frequency harmonics, we have determined experimentally the spontaneous emission factors of GaAs-AlGaAs QW vertical cavity surface-emitting semiconductor lasers with square windows of widths 10, 15, and 30 μm. The values obtained are of the order 10/sup -4/ and scale as the reciprocal of the window width. We have also assessed the reliability and accuracy of the modulation frequency harmonic measurement technique by comparison with the prior technique based on curve fitting to the light-current characteristic.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser variables measurement; optical modulation; quantum well lasers; semiconductor device reliability; spontaneous emission; surface emitting lasers; 10 mum; 15 mum; 30 mum; GaAs-AlGaAs; GaAs-AlGaAs QW vertical cavity surface-emitting semiconductor lasers; accuracy; curve fitting; light-current characteristic; modulation frequency harmonic measurement technique; modulation frequency harmonics measurement; reliability; spon; spontaneous emission factor; square windows; vertical-cavity surface-emitting semiconductor lasers; window width; Optical pumping; Optical refraction; Optical surface waves; Optical variables control; Semiconductor lasers; Spontaneous emission; Stimulated emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.473455

Filename

473455