Title :
16-GHz bandwidth InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver
Author :
Gutierrez-Aitken, A.L. ; Yang, K. ; Zhang, X. ; Haddad, G.I. ; Bhattacharya, P. ; Lunardi, L.M.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A monolithically integrated p-i-n transimpedance-amplifier photoreceiver based on an InAlAs-InGaAs HBT structure lattice-matched to InP has been designed, fabricated, and characterized. The p-i-n photodiode is implemented using the InGaAs base and collector layers of the HBT. A three-stage amplifier with a feedback resistance of 550 /spl Omega/ demonstrated a transimpedance gain of 46 dB/spl Omega/ and a bandwidth of 20 GHz, corresponding to a transimpedance-bandwidth product of 4 THz/spl Omega/. The measured -3 dB bandwidth of the integrated photoreceiver is 16 GHz, which is the highest reported to date for an InAlAs-InGaAs p-i-n/HBT monolithically integrated photoreceiver and is sufficient for 20-Gb/s operation.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; feedback amplifiers; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 16 GHz; 20 GHz; 20 Gbit/s; 550 ohm; InAlAs-InGaAs; InAlAs-InGaAs HBT structure; InAlAs-InGaAs monolithically integrated p-i-n/HBT photoreceiver; InP; design; fabrication; feedback resistance; integrated photoreceiver; lattice-matched; p-i-n photodiode; p-i-n transimpedance-amplifier photoreceiver; three-stage amplifier; transimpedance gain; transimpedance-bandwidth product; Bandwidth; Electrical resistance measurement; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Metallization; Molecular beam epitaxial growth; Optical amplifiers; P-i-n diodes; PIN photodiodes;
Journal_Title :
Photonics Technology Letters, IEEE
