Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

Author

Khan, Muhammad Asad ; Chen, Qian ; Yang, J.W. ; Shur, M.S. ; Dermott, B.T. ; Higgins, J.A.

Author_Institution

APA Optics, APA Inc., Blaine, MN, USA

Volume

17

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

325

Lastpage

327

Abstract

We report on the microwave operation of 1 μm gate AlGaN/GaN doped channel heterostructure field effect transistors (DC-HFET´s) with the cutoff frequency f_T of 18.3 GHz. These devices exhibit the cutoff frequency-gate length product in excess of 18 GHz/spl middot/μm, comparable to that of the state-of-the-art GaAs MESFET´s. We explain these improvements in the device performance by the increased sheet carrier density in the device channel and by a reduction in the parasitic series resistances, caused by doping the device channel.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; junction gate field effect transistors; microwave field effect transistors; 1 micron; 18.3 GHz; DC-HFET; GaN-AlGaN; GaN/AlGaN-doped channel heterostructure field effect transistor; cutoff frequency-gate length product; microwave operation; parasitic series resistance; sheet carrier density; Aluminum gallium nitride; Charge carrier density; Cutoff frequency; Doping; Gallium arsenide; Gallium nitride; HEMTs; MESFETs; MODFETs; Microwave devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.506356

Filename

506356