Title :
High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer
Author :
Suk, Sung Dae ; Yeo, Kyoung Hwan ; Cho, Keun Hwi ; Li, Ming ; Yeoh, Yun Young ; Lee, Sung-Young ; Kim, Sung Min ; Yoon, Eun Jung ; Kim, Min Sang ; Oh, Chang Woo ; Kim, Sung Hwan ; Kim, Dong-Won ; Park, Donggun
Author_Institution :
Samsung Electron. Co., Yongin
fDate :
3/1/2008 12:00:00 AM
Abstract :
A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/ mum for n-channel and 1.30 mA/ mum for p-channel TSNWFETs with mid-gap TiN metal gate that are normalized by a nanowire diameter. It also shows good short-channel effects immunity down to 30-nm gate length due to the GAA structure and the nanowire channel. The effect of bottom parasitic transistor in TSNWFET is also investigated.
Keywords :
MOSFET; elemental semiconductors; silicon; extremely high-drive currents; nanowire diameter; p-channel TSNWFETs; parasitic transistor; twin silicon nanowire MOSFET; 5 nm; 5nm; Bulk MOSFET; MOSFET; TSNWFET; Twin Silicon nanowire; bulk MOSFET; gate all around; gate all around (GAA); high performance; nanowire; twin silicon nanowire;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2008.917843
