A new approach to the theory and modeling of insulated-gate field-effect transistors

Consideration of basic charge relationships in the IGFET has led to a new formulation of the theory of the device which allows model characterization in a more general manner, and with greater accuracy, than previously achieved. The contribution of the mobile channel charge to the silicon surface potential, which is believed to have a significant influence on the device characteristics, is taken into account in this approach. Accurate device modeling is achieved over a very wide range of operation, extending from weak channel (subthreshold) to high level channel conditions. An important feature of the model is that it is expressed in terms of a constant effective channel mobility. Further, the current and charge relationships involved take the form of a single set of analytic closed-form expressions in terms of the terminal voltages for all conditions of device operation, and are thus appropriate for CAD implementation. The scope and accuracy of this approach to IGFET modeling are demonstrated by comparisons between measured and theoretical dc and small-signal characteristics for sample metal and silicon gate devices.