Title :
Theory of optical gain and threshold properties of semiconductor lasers
Author :
Aleksanian, A.G. ; Poluektov, I.A. ; Popov, Yu.M.
Author_Institution :
Armenian Academy of Sciences, Ashtarak, USSR
fDate :
3/1/1974 12:00:00 AM
Abstract :
The theory of optical gain in highly doped semiconductors employed for semiconductor lasers is developed based on the Green function approach. With the help of the analytical expression obtained for optical gain, the threshold properties of semiconductor lasers and their dependence on concentration of doping impurities and on temperature are studied. Results of numerical calculations of threshold characteristics for the most interesting cases are presented.
Keywords :
Electron optics; Frequency; Green function; Laser modes; Laser theory; Laser transitions; Semiconductor device doping; Semiconductor impurities; Semiconductor lasers; Temperature dependence;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1974.1068141
