Title :
Simple model for ion-assisted etching using Cl2--Ar inductively coupled plasma: effect of gas mixing ratio
Author :
Efremov, Alexander M. ; Kim, Dong-Pyo ; Kim, Chang-Il
Author_Institution :
Ivanovo State Univ. of Chem. & Technol., Russia
fDate :
6/1/2004 12:00:00 AM
Abstract :
In this paper, we investigated the relationships between Cl2--Ar mixing ratio, plasma parameters, plasma chemistry and etching kinetics using a combination of experimental investigations and modeling. Modeling of plasma chemistry was represented by zero-dimensional quasi-stationary model assuming electron energy distribution to be close to Maxwellian. For the surface kinetics, we used the simplified model based on the theory of active surface sites. The model confirmed the possibility of nonmonotonic behavior of etch rate behavior in the system with monotonic changes of fluxes of active species.
Keywords :
Langmuir probes; argon; chlorine; gas mixtures; optical sensors; plasma chemistry; plasma materials processing; plasma theory; reaction kinetics; sputter etching; surface chemistry; Cl2-Ar; Cl2-Ar inductively coupled plasma; active surface sites theory; electron energy distribution; etching kinetics; gas mixing ratio; ion-assisted etching; monotonic flux changes; nonmonotonic etch rate behavior; plasma chemistry; plasma parameters; surface kinetics; zero-dimensional quasistationary model; Etching; Ferroelectric materials; Kinetic theory; Plasma applications; Plasma chemistry; Plasma diagnostics; Plasma materials processing; Plasma measurements; Plasma properties; Semiconductor materials; Dissociation; etch mechanism; ion-assisted etching ionization; volume and surface kinetics;
Journal_Title :
Plasma Science, IEEE Transactions on
DOI :
10.1109/TPS.2004.828413
