• DocumentCode
    1056882
  • Title

    Temperature dependence of triodelike JFET drain current after pinchoff

  • Author

    Ozawa, Osamu

  • Author_Institution
    Tokyo Shibaura Electric Company, Ltd., Kawasaki, Japan
  • Volume
    24
  • Issue
    6
  • fYear
    1977
  • fDate
    6/1/1977 12:00:00 AM
  • Firstpage
    768
  • Lastpage
    769
  • Abstract
    The drain current of a triodelike JFET exhibits both positive and negative temperature dependence, depending on the current density. For drain current smaller than ∼5 A.cm-2, the thermionic-injection mechanism prevails, leading to the positive temperature coefficient. On the other hand, a space-charge-limited current flows in the case of current density larger than ∼10 A.cm-2, resulting in nearly T-1dependence due to the mobility decrease.
  • Keywords
    Boron; Conductivity; Current density; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Impurities; Shape; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1977.18821
  • Filename
    1479013