DocumentCode :
1056882
Title :
Temperature dependence of triodelike JFET drain current after pinchoff
Author :
Ozawa, Osamu
Author_Institution :
Tokyo Shibaura Electric Company, Ltd., Kawasaki, Japan
Volume :
24
Issue :
6
fYear :
1977
fDate :
6/1/1977 12:00:00 AM
Firstpage :
768
Lastpage :
769
Abstract :
The drain current of a triodelike JFET exhibits both positive and negative temperature dependence, depending on the current density. For drain current smaller than ∼5 A.cm-2, the thermionic-injection mechanism prevails, leading to the positive temperature coefficient. On the other hand, a space-charge-limited current flows in the case of current density larger than ∼10 A.cm-2, resulting in nearly T-1dependence due to the mobility decrease.
Keywords :
Boron; Conductivity; Current density; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Impurities; Shape; Temperature dependence;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1977.18821
Filename :
1479013
Link To Document :
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