DocumentCode
1056882
Title
Temperature dependence of triodelike JFET drain current after pinchoff
Author
Ozawa, Osamu
Author_Institution
Tokyo Shibaura Electric Company, Ltd., Kawasaki, Japan
Volume
24
Issue
6
fYear
1977
fDate
6/1/1977 12:00:00 AM
Firstpage
768
Lastpage
769
Abstract
The drain current of a triodelike JFET exhibits both positive and negative temperature dependence, depending on the current density. For drain current smaller than ∼5 A.cm-2, the thermionic-injection mechanism prevails, leading to the positive temperature coefficient. On the other hand, a space-charge-limited current flows in the case of current density larger than ∼10 A.cm-2, resulting in nearly T-1dependence due to the mobility decrease.
Keywords
Boron; Conductivity; Current density; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Impurities; Shape; Temperature dependence;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1977.18821
Filename
1479013
Link To Document