Title :
SEM analysis of TWT helix material samples
Author :
Gilmour, A.S., Jr.
Author_Institution :
State University of New York at Buffalo, Buffalo, NY
fDate :
6/1/1977 12:00:00 AM
Abstract :
Examination of tungsten and tungsten-rhenium samples from TWT helices, using a secondary emission microscope, shows surface defects comparable in size to the skin depth at the operating frequency of the TWT. It is concluded that the difference between measured and calculated helix loss is largely accounted for by these surface defects.
Keywords :
Conductors; Dielectrics; Loss measurement; Materials testing; Physics; Scanning electron microscopy; Semiconductor device reliability; Skin; Surface cracks; Tungsten;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18825
