Title :
IIa-3 planar P-N junctions in InSb by Be ion implantation
fDate :
9/1/1977 12:00:00 AM
Keywords :
Charge coupled devices; Current density; Diodes; Fabrication; Ice; Ion implantation; Laboratories; MOSFETs; P-n junctions; Virtual reality;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18915
