Title :
IIIa-7 experimental determination of carrier velocities in inversion layers on silicon
fDate :
9/1/1977 12:00:00 AM
Keywords :
Electron devices; Laboratories; MOSFETs; P-n junctions; Performance evaluation; Silicon; Surface impedance; Thyristors; Velocity measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1977.18936
