DocumentCode :
1058214
Title :
Hot Carrier Effects in Wireless Communication Systems Built on Short-Channel MOSFETs
Author :
Wu, Hsiao-Chun ; Herlekar, Sameer R. ; Saquib, Mohammad ; Srivastava, Ashok
Author_Institution :
Louisiana State Univ., Baton Rouge
Volume :
6
Issue :
7
fYear :
2007
fDate :
7/1/2007 12:00:00 AM
Firstpage :
2402
Lastpage :
2406
Abstract :
Phase noise is a critical factor that degrades the synchronization performance of a wireless communication receiver. Hot-carriers (HCs), found in the CMOS synchronization devices, are high-energy charge-carriers that can degrade the MOSFETs performance by damaging the internal device structure and lead to the phase noise increase therein. Such incremental phase noise can be related to the essential parameter, namely the MOSFET threshold voltage due to the HC effect, which is particularly evident in the short-channel MOSFET devices. In this letter, we analyze the impact of the phase noise arising from the HC effect on the wireless systems in terms of the bit-error-rate (BER) and the signal-to-interference-plus-noise ratio (SINR).
Keywords :
CMOS integrated circuits; MOSFET; error statistics; hot carriers; phase noise; quadrature amplitude modulation; radio receivers; radiofrequency interference; semiconductor device noise; synchronisation; BER; CMOS synchronization devices; HC; MOSFET threshold voltage; QAM; SINR; bit-error-rate; high-energy charge-carriers; hot carrier effects; internal device structure damage; phase noise; short-channel MOSFET; signal-to-interference-plus-noise ratio; synchronization performance; wireless communication receiver; Bit error rate; Degradation; Hot carrier effects; Hot carriers; MOSFETs; Phase noise; Signal analysis; Signal to noise ratio; Threshold voltage; Wireless communication;
fLanguage :
English
Journal_Title :
Wireless Communications, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-1276
Type :
jour
DOI :
10.1109/TWC.2007.05953
Filename :
4274990
Link To Document :
بازگشت