DocumentCode

1058481

Title

VI-6 a new type of interfacial charge in the SiO2-Si system

Author

Ngai, K.L.

Volume

24

Issue

9

fYear

1977

fDate

9/1/1977 12:00:00 AM

Firstpage

1216

Lastpage

1217

Keywords

Charge transfer; Electrons; Laboratories; Lattices; MOS devices; Silicon; Stability; Temperature; Thermal stresses; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1977.18977

Filename

1479169