Epitaxial silicon solar cells with uniformly doped layer

Solar cell structures have been prepared both by successive deposition of p-type and n-type silicon layers on p⁺-type single-crystal silicon. Impurities are uniformly doped at epitaxial layers. Efficiency of 9.0 percent with the epitaxial layer junction structure and 12.8 percent with the diffused 0.3-μm junction depth structure have been achieved.