DocumentCode :
1060006
Title :
Calculation of microwave performance of buffer layer gate GaAs MESFET´s
Author :
Nagashima, Atsushi ; Umebachi, Shotaro ; Kano, Gota
Author_Institution :
Matsushita Electronics Corporation Research Laboratory, Takatsuki, Osaka, Japan
Volume :
25
Issue :
5
fYear :
1978
fDate :
5/1/1978 12:00:00 AM
Firstpage :
537
Lastpage :
539
Abstract :
The microwave performance of a GaAs MESFET, where a buffer layer of a low carrier concentration is inserted between the gate metal and the channel layer, is calculated and compared with that of a conventional MESFET. It is found that the use of such a high-resistivity buffer layer contributes to a great improvement of the microwave performance of the GaAs MESFET, especially in fT and 
.
.Keywords :
Buffer layers; Conductivity; Cutoff frequency; Equivalent circuits; Gallium arsenide; Impurities; MESFET circuits; Poisson equations; Schottky barriers; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1978.19123
Filename :
1479517
Link To Document :
